Electromigration in solid-state integrated structures with through holes
https://doi.org/10.1234/2221-7789-2025-3-26-30
EDN: NCUQOV
Abstract
The paper studies the resistance to electromigration of structures with through holes not filled with tungsten and the effect of filling the holes with tungsten on the electromigration process. It is shown that with a decrease in the hole diameter in structures with holes not filled with tungsten, the mean failure time decreases due to poor aluminum coating and an increase in the ratio of the hole width to its length, and in the case of filling the holes with tungsten, the mean failure time does not depend on the diameter. It is shown that during electromigration, the resistance of the through hole changes due to the effect of high-density current, which causes silicon migration along aluminum with its subsequent deposition along the tungsten-aluminum interface.
About the Authors
Natalia V. Cherkesova
Kabardino-Balkarian State University named after Kh.M. Berbekov.
Russian Federation
Russian Federation
Candidate of Physical and Mathematical Sciences, Associate Professor, Associate Professor of the Department of Electronics and Digital Information Technologies of the Institute of Electronics, Robotics and Artificial Intelligence.
Hasan A. Mustafaev
Kabardino-Balkarian State University named after Kh.M. Berbekov.
Russian Federation
Russian Federation
Doctor of Technical Sciences, Professor of the Department of Electronics and Digital Information Technologies of the Institute of Electronics, Robotics and Artificial Intelligence.
Arslan H. Mustafayev
Dagestan State University of National Economy.
Russian Federation
Russian Federation
Doctor of Technical Sciences, Professor.
Denis M. Zdravomyslov
Kabardino-Balkarian State University named after Kh.M. Berbekov.
Russian Federation
Russian Federation
2nd year postgraduate student of the Department of Electronic Component Base of Micro-, Nano-Electronics and Quantum Devices
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Review
For citations:
Cherkesova N.V., Mustafaev H.A., Mustafayev A.H., Zdravomyslov D.M. Electromigration in solid-state integrated structures with through holes. Proceedings of the Kabardino-Balkarian State University. 2025;15(3):26-30. (In Russ.) https://doi.org/10.1234/2221-7789-2025-3-26-30. EDN: NCUQOV
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