Arsenide-silicate glasses formed by oxidation of sih4 and ash3 to diffuse arsenic into si and sio2
https://doi.org/10.1234/2221-7789-2025-1-16-20
EDN: JDWJKZ
Abstract
The paper studied arsenide-silicate glasses formed by oxidation of SiH4 and AsH3. It has been shown that the precipitation rate decreases sharply when the concentration of AsH3 in the mixture of reagents is more than 10 mol%. The diffusion of arsenic through barrier oxide and without barrier oxide was studied using oxygen O2 and argon Ar as a diffusion medium. It has been shown that the use of oxygen O2 instead of argon Ar as a diffusion medium changes the nature of defects, leads to an increase in the depths of transitions and the surface concentration of arsenic As in diffusion layers. A connection has been found between the concentration of As2O3 in glasses and the tendency to form defects in glass during heat treatment.
About the Authors
Hasan A. Mustafayev
Kabardino-Balkarian State University named after H.M. Berbekova.
Russian Federation
Russian Federation
Department of Electronics and Digital Information Technologies, Institute of Electronics, Robotics and Artificial Intelligence
Arslan H. Mustafayev
Kabardino-Balkarian State University named after H.M. Berbekova.
Russian Federation
Russian Federation
Doctor of Technical Sciences, Professor of the Department of Information Technology and Information Security.
Denis M. Zdravomyslov
Kabardino-Balkarian State University named after H.M. Berbekova.
Russian Federation
Russian Federation
Graduate student of 2 years of study in the specialty: Electronic component base of micro- and electronics, quantum devices.
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Review
For citations:
Mustafayev H.A., Mustafayev A.H., Zdravomyslov D.M. Arsenide-silicate glasses formed by oxidation of sih4 and ash3 to diffuse arsenic into si and sio2. Proceedings of the Kabardino-Balkarian State University. 2025;15(1):16-20. (In Russ.) https://doi.org/10.1234/2221-7789-2025-1-16-20. EDN: JDWJKZ
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